- Patent Title: Substrate having an insulating layer with varying height and angle
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Application No.: US17002143Application Date: 2020-08-25
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Publication No.: US11315897B2Publication Date: 2022-04-26
- Inventor: Satoru Takaku
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2020-050227 20200319
- Main IPC: H01L23/053
- IPC: H01L23/053 ; H01L23/48 ; H01L23/28 ; H01L21/00 ; H01L21/44 ; H05K1/00 ; B23K31/02 ; H01L23/00 ; H01L23/488 ; H01L23/14 ; H01L23/538 ; H01L23/31 ; H01L23/498 ; H01L23/532
Abstract:
A semiconductor package includes: a semiconductor element; a substrate provided with the semiconductor element on a first surface of the substrate, the substrate including a first wiring partially exposed on a second surface of the substrate opposite to the first surface; a first structure formed of an insulating film, or an insulating film and a metal portion, the first structure surrounding an exposed portion of the first wiring, the first structure having asymmetric height and angle; and a first electrode provided on the exposed portion of the first wiring.
Public/Granted literature
- US20210296273A1 SEMICONDUCTOR PACKAGE Public/Granted day:2021-09-23
Information query
IPC分类:
