Invention Grant
- Patent Title: Bottom-up approach to high aspect ratio hole formation in 3D memory structures
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Application No.: US16643965Application Date: 2018-08-28
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Publication No.: US11315943B2Publication Date: 2022-04-26
- Inventor: Praburam Gopalraja , Susmit Singha Roy , Abhijit Basu Mallick , Srinivas Gandikota
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- International Application: PCT/US2018/048342 WO 20180828
- International Announcement: WO2019/050714 WO 20190314
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/11582 ; H01L27/11556
Abstract:
Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars. The height of the pillars is reduced so that the top of the pillars are below the surface of the blanket film and the process is optionally repeated to form a structure of predetermined height. The pillars can be removed from the features after formation of the predetermined height structure to form high aspect ratio features.
Public/Granted literature
- US20210050365A1 Bottom-Up Approach To High Aspect Ratio Hole Formation In 3D Memory Structures Public/Granted day:2021-02-18
Information query
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