Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16661291Application Date: 2019-10-23
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Publication No.: US11315944B2Publication Date: 2022-04-26
- Inventor: Moon Sik Seo , Gil Bok Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2019-0068902 20190611
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11521 ; H01L27/11551
Abstract:
The present technology provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a channel structure, insulating structures surrounding the channel structure and stacked to be spaced apart from each other, interlayer insulating films surrounding the insulating structures, respectively, and a gate electrode extending from between the interlayer insulating films to between the insulating structures and surrounding the channel structure. The insulating structures may include protrusion portions extending to cover edges of the interlayer insulating films facing the channel structure, and the gate electrode may extend between the protrusion portions which are adjacent to each other.
Information query
IPC分类:
