Invention Grant
- Patent Title: High density power device with selectively shielded recessed field plate
-
Application No.: US16991935Application Date: 2020-08-12
-
Publication No.: US11316021B2Publication Date: 2022-04-26
- Inventor: Mohamed N. Darwish , Jun Zeng , Richard A. Blanchard
- Applicant: MaxPower Semiconductor Inc.
- Applicant Address: US CA San Jose
- Assignee: MaxPower Semiconductor Inc.
- Current Assignee: MaxPower Semiconductor Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patent Law Group
- Agent Brian Ogonowsky
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/739 ; H01L29/78 ; H01L29/06
Abstract:
A vertical transistor structure in which a recessed field plate trench surrounds multiple adjacent gate electrodes. Thus the specific on-state conductance is increased, since the ratio of recessed field plate area to channel area is reduced. Various versions use two, three, or more distinct gate electrodes within the interior of a single RFP or RSFP trench's layout.
Public/Granted literature
- US20210083061A1 High Density Power Device with Selectively Shielded Recessed Field Plate Public/Granted day:2021-03-18
Information query
IPC分类:
