Invention Grant
- Patent Title: Insulated gate bipolar transistor structure and manufacturing method thereof
-
Application No.: US17000371Application Date: 2020-08-24
-
Publication No.: US11316036B2Publication Date: 2022-04-26
- Inventor: Chun-Sheng Chen , Yen-Cheng Fang , Zih-Han Chen
- Applicant: Powerchip Semiconductor Manufacturing Corporation
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW109120243 20200616
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/06 ; H01L29/66 ; H01L29/10 ; H01L29/40 ; H01L29/423 ; H01L29/08
Abstract:
An insulated gate bipolar transistor (IGBT) structure including a substrate and a first gated PNPN diode is provided. The first gated PNPN diode is located on the substrate. The first gated PNPN diode includes a first gate, a first source/drain extension (SDE) region, and a second SDE region. The first gate is located on the substrate. The first SDE region and the second SDE region are located in the substrate on two sides of the first gate.
Public/Granted literature
- US20210391451A1 INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-12-16
Information query
IPC分类:
