Invention Grant
- Patent Title: Inverted wide base double magnetic tunnel junction device
-
Application No.: US16817744Application Date: 2020-03-13
-
Publication No.: US11316104B2Publication Date: 2022-04-26
- Inventor: Pouya Hashemi , Bruce B. Doris , Janusz Jozef Nowak , Jonathan Zanhong Sun
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Jeffrey M. Ingalls
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L27/22 ; H01L43/02 ; H01L43/10
Abstract:
A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than a width of the first magnetic tunnel junction stack.
Public/Granted literature
- US20210288246A1 INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE Public/Granted day:2021-09-16
Information query
IPC分类:
