Invention Grant
- Patent Title: Semiconductor device, charging method thereof, and electronic device
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Application No.: US16608894Application Date: 2018-04-23
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Publication No.: US11316361B2Publication Date: 2022-04-26
- Inventor: Takeshi Osada
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JPJP2017-092025 20170503
- International Application: PCT/IB2018/052795 WO 20180423
- International Announcement: WO2018/203176 WO 20181108
- Main IPC: G06N3/02
- IPC: G06N3/02 ; H02J7/02 ; H02J50/12 ; H02J50/40 ; H02J7/00 ; G06N3/08

Abstract:
A novel semiconductor device or a semiconductor device capable of preventing overcharging is provided. A power receiving portion has a function of generating a signal for canceling a wireless signal transmitted from a power feeding portion when the charging is completed. Specifically, when the remaining battery capacity of the power receiving portion is one hundred percent or higher than or equal to a predetermined reference value, the power receiving portion has a function of generating an electromagnetic wave for canceling an electromagnetic wave transmitted from the power feeding portion. Thus, a magnetic field for canceling a magnetic field formed of the electromagnetic wave transmitted from the power feeding portion is formed, so that overcurrent in the power receiving portion can be prevented.
Public/Granted literature
- US20200185951A1 SEMICONDUCTOR DEVICE, CHARGING METHOD THEREOF, AND ELECTRONIC DEVICE Public/Granted day:2020-06-11
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