Invention Grant
- Patent Title: Controlled gate-source voltage N-channel field effect transistor (NFET) gate driver
-
Application No.: US16987023Application Date: 2020-08-06
-
Publication No.: US11316441B2Publication Date: 2022-04-26
- Inventor: Pulkit Shah
- Applicant: Cypress Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H02M7/217
- IPC: H02M7/217 ; H02M3/07 ; H02M3/335 ; H02J7/00
Abstract:
Controlling gate-source voltage with a gate driver in a secondary-side integrated circuit (IC) controller for a secondary-controlled AC-DC converter is described. In an example embodiment, the gate driver is configured to programmably control the gate-source voltage and the slew rate of a secondary-side provider field effect transistor (FET) in the converter.
Public/Granted literature
- US20210058005A1 CONTROLLED GATE-SOURCE VOLTAGE N-CHANNEL FIELD EFFECT TRANSISTOR (NFET) GATE DRIVER Public/Granted day:2021-02-25
Information query
IPC分类:
