Invention Grant
- Patent Title: RF power transistor circuit
-
Application No.: US16939831Application Date: 2020-07-27
-
Publication No.: US11316481B2Publication Date: 2022-04-26
- Inventor: Hussain H. Ladhani , Gerard J. Bouisse , Jeffrey K. Jones
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/32 ; H03F3/21 ; H03F1/02 ; H03F1/56 ; H03F3/193 ; H03F3/26 ; H03F1/42

Abstract:
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
Public/Granted literature
- US20200382075A1 RF POWER TRANSISTOR CIRCUIT Public/Granted day:2020-12-03
Information query