Systems and methods are described for controlling inrush current for a system comprising a plurality of metal-oxide-semiconductor field-effect transistors (MOSFETs). The system may include a control circuit coupled to parallel series of gate drivers, where each gate driver is coupled to a different MOSFET. An inrush current may be received during charging of a capacitor of the switch circuit. During a first period of a ramp time, the control circuit may cause the inrush current to pass through a first gate driver. During a second period of the ramp time, the control circuit may cause the inrush current to pass through a second gate driver. By using a control circuit to cause the inrush current to pass through each MOSFET, a gate-source threshold voltage for the MOSFETs may remain below safe operating areas (SOAs) for the different MOSFETs.