Invention Grant
- Patent Title: Laminated film and method for producing semiconductor element
-
Application No.: US16822110Application Date: 2020-03-18
-
Publication No.: US11318641B2Publication Date: 2022-05-03
- Inventor: Seigo Kotera
- Applicant: AGC Inc.
- Applicant Address: JP Chiyoda-ku
- Assignee: AGC Inc.
- Current Assignee: AGC Inc.
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2017-222227 20171117
- Main IPC: B29C33/68
- IPC: B29C33/68 ; B29C45/14 ; B32B27/08 ; B32B27/32 ; B32B27/34 ; H01L21/56 ; B29L31/34

Abstract:
To provide a film capable of suppressing both of formation of wrinkles when a release film is suction-attached to a cavity surface in compression molding, and formation of wrinkles when the cavity bottom surface to which the release film has been suction-attached is raised; and a method for producing a semiconductor element by using said film. A laminated film 1 comprises a layer 3 of shrinkable film, of which the storage elastic modulus E′ at 180° C. is at least 70 MPa, and the thermal shrinkage in 30 minutes at 180° C., with reference to 20° C., in each of the machine direction (MD) and the transverse direction (TD), is at least 3%, and a fluororesin layer 5 present on one side or both sides of the shrinkable film layer 3.
Public/Granted literature
- US20200215728A1 LAMINATED FILM AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT Public/Granted day:2020-07-09
Information query