A vapor deposition method and a vapor deposition apparatus that, when a vapor deposition material is deposited on a substrate, make it possible to form deposition layer pattern precisely so that the deposition layer pattern is formed uniformly without a gap formed between a deposition mask and the substrate. A deposition mask is disposed with its periphery held by a frame. A substrate on which a vapor deposition layer is to be formed is mounted over an upper surface of the deposition mask. A vapor deposition source is disposed facing the deposition mask and evaporates a vapor deposition material. The vapor deposition is performed while the substrate is pressed vertically at a position of a center of deflection of the deposition mask and on an upper surface of the substrate until that a length of the substrate substantially becomes identical to a length of the deposition mask being bowed down and expanded.