Invention Grant
- Patent Title: System and method for increasing group III-nitride semiconductor growth rate and reducing damaging ion flux
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Application No.: US16735568Application Date: 2020-01-06
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Publication No.: US11319644B2Publication Date: 2022-05-03
- Inventor: William Alan Doolittle , Evan A. Clinton , Chloe A. M. Fabien , Brendan Patrick Gunning , Joseph J. Merola
- Applicant: Georgia Tech Research Corporation
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Troutman Pepper Hamilton Sanders LLP
- Agent Ryan A Schneider
- Main IPC: C30B23/02
- IPC: C30B23/02 ; H01L21/02 ; C30B29/40 ; C23C16/50 ; C23C16/30 ; C23C16/452 ; C23C14/06 ; C23C14/22 ; C30B31/06
Abstract:
Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 μm/hour can be achieved.
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