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US11320388B2 SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor 有权

SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor
Abstract:
A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cm2 or less.
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