Invention Grant
- Patent Title: Nanogap sensors and methods of forming the same
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Application No.: US16505733Application Date: 2019-07-09
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Publication No.: US11320417B2Publication Date: 2022-05-03
- Inventor: Xinshu Cai , Shyue Seng Tan , Eng Huat Toh , Kiok Boone Elgin Quek
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Viering Jentschura & Partner MBB
- Main IPC: G01N33/487
- IPC: G01N33/487 ; G01N27/447

Abstract:
In a non-limiting embodiment, a device may include a substrate having conducting lines thereon. One or more fin structures may be arranged over the substrate. Each fin structure may include a sensor arranged over the substrate and around the fin structure. The sensor may include a self-aligned first sensing electrode and a self-aligned second sensing electrode arranged around the fin structure. The first sensing electrode and the second sensing electrode each may include a first portion lining a sidewall of the fin structure and a second portion arranged laterally from the first portion. At least the first portion of the first sensing electrode and the first portion of the second sensing electrode may define a sensing cavity of the sensor. The second portion of the first sensing electrode and the second portion of the second sensing electrode may be electrically coupled to the conducting lines.
Public/Granted literature
- US20210010997A1 NANOGAP SENSORS AND METHODS OF FORMING THE SAME Public/Granted day:2021-01-14
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