Invention Grant
- Patent Title: Process for fabricating a photonic chip via transfer of a die to a receiving substrate
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Application No.: US17078277Application Date: 2020-10-23
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Publication No.: US11320592B2Publication Date: 2022-05-03
- Inventor: Sylvie Menezo , Bertrand Szelag
- Applicant: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1911989 20191025
- Main IPC: G02B6/136
- IPC: G02B6/136

Abstract:
The invention relates to a process for fabricating a photonic chip including steps of transferring a die to an actual transfer region of the receiving substrate comprising a central region entirely covered by the die and a peripheral region having a free surface, a first waveguide lying solely in the central region, and a second waveguide lying in the peripheral region; depositing an etch mask on a segment of the die and around the actual transfer region; and dry etching a free segment of the die, the free surface of the peripheral region then being partially etched.
Public/Granted literature
- US20210124119A1 PROCESS FOR FABRICATING A PHOTONIC CHIP VIA TRANSFER OF A DIE TO A RECEIVING SUBSTRATE Public/Granted day:2021-04-29
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