Invention Grant
- Patent Title: Method of measuring critical dimension of a three-dimensional structure and apparatus for measuring the same
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Application No.: US17206654Application Date: 2021-03-19
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Publication No.: US11320732B2Publication Date: 2022-05-03
- Inventor: Chuljin Park , Hyungjin Kim
- Applicant: SK hynix Inc. , IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Applicant Address: KR Icheon; KR Seoul
- Assignee: SK hynix Inc.,IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Current Assignee: SK hynix Inc.,IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Current Assignee Address: KR Icheon; KR Seoul
- Priority: KR10-2020-0033894 20200319
- Main IPC: G03F1/36
- IPC: G03F1/36 ; G03F7/20 ; G06F30/398

Abstract:
A method of measuring a critical dimension comprises determining matrix information on a hypothesized parameter distribution on the critical dimension; obtaining a measurement spectrum for each wavelength of a light reflected from the three-dimensional structure; sampling a first candidate parameter vector for determining a numerical simulation spectrum that approximates the measurement spectrum; linearly transforming the first candidate parameter vector by using the matrix information; determining a first candidate parameter which minimizes a difference between the measurement spectrum and the numerical simulation spectrum within the linearly transformed first candidate parameter vector; determining a second candidate parameter vector derived from the first candidate parameter and having the hypothesized parameter distribution by using a heuristic algorithm; determining a second candidate parameter that minimizes a difference between the measurement spectrum and the numerical simulation spectrum within the second candidate parameter vector; and updating the first candidate parameter by using the second candidate parameter.
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