Invention Grant
- Patent Title: Reticle with conductive material structure
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Application No.: US17066181Application Date: 2020-10-08
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Publication No.: US11320733B2Publication Date: 2022-05-03
- Inventor: Hsiao-Lun Chang , Chueh-Chi Kuo , Tsung-Yen Lee , Tzung-Chi Fu , Li-Jui Chen , Po-Chung Cheng , Che-Chang Hsu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: G03F1/40
- IPC: G03F1/40 ; G03F1/66 ; G03F1/24 ; G03F1/38

Abstract:
A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.
Public/Granted literature
- US20210026236A1 RETICLE WITH CONDUCTIVE MATERIAL STRUCTURE Public/Granted day:2021-01-28
Information query
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