Pattern forming material and pattern forming method

Invention Grant

US11320736B2 Pattern forming material and pattern forming method 有权

Please log in to see more content

Patent Title: Pattern forming material and pattern forming method
Application No.: US16123095

Application Date: 2018-09-06
Publication No.: US11320736B2

Publication Date: 2022-05-03
Inventor: Ryosuke Yamamoto , Seiji Morita , Norikatsu Sasao , Koji Asakawa , Tomoaki Sawabe , Shinobu Sugimura
Applicant: KIOXIA CORPORATION
Applicant Address: JP Tokyo
Assignee: KIOXIA CORPORATION
Current Assignee: KIOXIA CORPORATION
Current Assignee Address: JP Tokyo
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner L.L.P.
Priority: JPJP2018-005913 20180117
Main IPC: H01L21/308
IPC: H01L21/308 ; H01L21/311 ; G03F7/09 ; C08F220/08 ; C08F212/08 ; C08F120/08 ; G03F7/00 ; G03F7/004 ; G03F7/20 ; C08F120/28 ; G03F7/40 ; H01L21/033 ; C08F220/28 ; H01L27/11582

Pattern forming material and pattern forming method

Abstract:

A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.

Public/Granted literature

US20190218321A1 PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD Public/Granted day:2019-07-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）