A composition for resist underlayer film formation, includes a first compound and a solvent. The first compound includes a first group represented by formula (1) and a partial structure comprising an aromatic ring. In the formula (1), R1 represents a single bond or an oxygen atom, R2 represents a divalent chain or alicyclic hydrocarbon group having 1 to 30 carbon atoms, and * denotes a bonding site to a moiety other than the first group of the first compound. *—R1—R2—CN  (1)