A wear leveling and access method and device for a non-volatile memory, and a storage medium. The method includes: logically dividing a non-volatile memory into physical units of p levels, the non-volatile memory including a plurality of physical units of the first level, each physical unit of the p−1-th level including a plurality of physical units of the p-th level, and p being a positive integer greater than one (S110); when a time period corresponding to the physical units of the q-th level arrives, replacing the data of each of the physical units of the q-th level with other physical units of the q-th level, q being any positive integer from one to p (S120).