A Dual In-Line Memory Module (DIMM) includes a plurality of memory devices mounted on a circuit board of the DIMM. The memory devices are arranged to be accessed via at least two memory channels. The DIMM further includes an array of surface contact connections. Each surface contact connection is configured to be engaged with an associated contact element of a z-axis compression connector. The array of surface contact connections are arranged to conduct signals for the memory channels. The memory devices are placed upon the memory circuit board in an array of X rows of memory devices and Y columns of memory devices, where X and Y are integers. When the DIMM has a first number of the memory devices A=X1×Y1 that is less than when the DIMM has a second number of memory devices B=X2×Y2, then either X1 is less than X2, or Y1 is less than Y2.