Invention Grant
- Patent Title: Method of writing data in memory device, method of reading data from memory device and method of operating memory device including the same
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Application No.: US16888671Application Date: 2020-05-30
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Publication No.: US11321016B2Publication Date: 2022-05-03
- Inventor: Youngsun Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2019-0168037 20191216
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/10 ; G11C16/26 ; G11C16/04 ; G11C16/10

Abstract:
In a method of writing data in a memory device, a plurality of duplicated bit rows is generated by performing a first duplication operation in which a plurality of bits included in write data are copied by units of bits. A plurality of duplicated bit groups is generated by performing a second duplication operation in which the plurality of duplicated bit rows is copied by units of rows. The plurality of duplicated bit groups is stored into a plurality of memory regions included in the memory device, respectively. Each of the plurality of memory regions is a region that is simultaneously sensed during a data read operation.
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Information query