Invention Grant
- Patent Title: Memory device and method of operating the same
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Application No.: US16918629Application Date: 2020-07-01
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Publication No.: US11321018B2Publication Date: 2022-05-03
- Inventor: Byoung In Joo
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2019-0134761 20191028
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory device, of an electronic device, that controls a start of an operation of a sub microcontroller includes a plurality of memory cells. The memory device includes a command interface logic encoding a command received from an outside of the memory device to generate an encoding signal, a multi-microcontroller circuit including a main microcontroller and a sub microcontroller outputting a setting signal for performing an operation on the plurality of memory cells based on the encoding signal, and a read only memory outputting ROM data corresponding to a ROM address output from the multi-microcontroller circuit. The sub microcontroller receives a micro out signal output from the main microcontroller and simultaneously operates with the main microcontroller, during an operation of the main microcontroller.
Public/Granted literature
- US20210124528A1 MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2021-04-29
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