Invention Grant
- Patent Title: Method for simultaneously accessing first DRAM device and second DRAM device and associated memory controller
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Application No.: US16856059Application Date: 2020-04-23
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Publication No.: US11321232B2Publication Date: 2022-05-03
- Inventor: Wen-Wei Lin , Kuan-Chia Huang , Ching-Sheng Cheng
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW HsinChu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW HsinChu
- Agent Winston Hsu
- Priority: TW108116747 20190515
- Main IPC: G11C11/408
- IPC: G11C11/408 ; G06F12/06
Abstract:
A method for simultaneously accessing a first DRAM device and a second DRAM device includes the steps of: in an active phase, generating a first signal at a first pad, wherein the first signal is provided for the first DRAM device to select a first memory bank group, and the first signal is not for the second DRAM device to select any memory bank group; and generating a second signal at the first pad, wherein the second signal is provided for the first DRAM device to select the first bank group, and the second signal and the first signal correspond to a same digital value.
Information query
IPC分类:
