A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g·μB·B>min(Δ(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that Δ(Vbg)