Invention Grant
- Patent Title: Power-gating techniques with buried metal
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Application No.: US17076540Application Date: 2020-10-21
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Publication No.: US11322197B1Publication Date: 2022-05-03
- Inventor: Rajiv Kumar Sisodia , Andy Wangkun Chen , Ayush Kulshrestha , Sony , Sriram Thyagarajan , Yew Keong Chong
- Applicant: Arm Limited
- Applicant Address: GB Cambridge
- Assignee: Arm Limited
- Current Assignee: Arm Limited
- Current Assignee Address: GB Cambridge
- Agency: Pramudji Law Group PLLC
- Agent Ari Pramudji
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/418

Abstract:
Various implementations described herein are related to a device having wordline drivers coupled to a core array. The device may have backside power network with buried power rails. The device may have header logic coupled to power supply connections of the wordline drivers by way of the buried power rails, and the header logic may be used to power-gate the wordline drivers.
Public/Granted literature
- US20220122656A1 Power-Gating Techniques with Buried Metal Public/Granted day:2022-04-21
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