Invention Grant
- Patent Title: Multi-function equipment implementing fabrication of high-k dielectric layer
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Application No.: US17141935Application Date: 2021-01-05
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Publication No.: US11322348B2Publication Date: 2022-05-03
- Inventor: Miin-Jang Chen , Chen-Yang Chung
- Applicant: Miin-Jang Chen
- Applicant Address: TW Taipei
- Assignee: Miin-Jang Chen
- Current Assignee: Miin-Jang Chen
- Current Assignee Address: TW Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW106131698 20170915
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01J37/32 ; C23C16/455 ; C23C16/56 ; H01L29/51 ; C23C16/503 ; C23C16/40

Abstract:
A multi-function equipment implements a method of fabricating a thin film. The multi-function equipment according to the invention includes a reaction chamber, a plasma source, a plasma source power generating unit, a bias electrode, an AC (Alternating Current) voltage generating unit, a DC (Direct current) bias generating unit, a metal chuck, a first precursor supply source, a second precursor supply source, a carrier gas supply source, an oxygen supply source, a nitrogen supply source, an inert gas supply source, an automatic pressure controller, and a vacuum pump.
Public/Granted literature
- US20210134587A1 MULTI-FUNCTION EQUIPMENT IMPLEMENTING FABRICATION OF HIGH-K DIELECTRIC LAYER Public/Granted day:2021-05-06
Information query
IPC分类: