Invention Grant
- Patent Title: Method of manufacturing semiconductor structure
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Application No.: US16897249Application Date: 2020-06-09
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Publication No.: US11322360B2Publication Date: 2022-05-03
- Inventor: Yu-Hsiang Hu , Wei-Yu Chen , Hung-Jui Kuo , Wei-Hung Lin , Ming-Da Cheng , Chung-Shi Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/304
- IPC: H01L21/304 ; H01L25/07 ; H01L23/31 ; H01L23/14 ; H01L23/15 ; H01L25/065 ; H01L23/00 ; H01L21/56
Abstract:
A method of manufacturing a semiconductor structure includes receiving a die comprising a top surface and a sacrificial layer covering the top surface; disposing the die on a substrate; disposing a molding surrounding the die; removing a portion of the molding to expose a sidewall of the sacrificial layer, wherein a top surface of the molding is at a level substantially same as the top surface of the die; and removing the sacrificial layer from the die.
Public/Granted literature
- US20200303200A1 METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2020-09-24
Information query
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