Invention Grant
- Patent Title: Method of manufacturing semiconductor devices including formation of adhesion enhancement layer
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Application No.: US16664317Application Date: 2019-10-25
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Publication No.: US11322397B2Publication Date: 2022-05-03
- Inventor: Hsiao-Min Chen , Jyh-Nan Lin , Kai-Shiung Hsu , Ding-I Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02
Abstract:
In a method of manufacturing a semiconductor device, a first dielectric layer is formed over a substrate, an adhesion enhancement layer is formed on a surface of the first dielectric layer, and a second dielectric layer is formed on the adhesion enhancement layer.
Public/Granted literature
- US1322116A Means for forming boiler-headers. Public/Granted day:1919-11-18
Information query
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