Invention Grant
- Patent Title: Substrate dicing method, method of fabricating semiconductor device, and semiconductor chip fabricated by them
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Application No.: US16909136Application Date: 2020-06-23
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Publication No.: US11322405B2Publication Date: 2022-05-03
- Inventor: Junho Yoon , Jungchul Lee , Byungmoon Bae , Junggeun Shin , Hyunsu Sim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0151826 20191125
- Main IPC: G11B11/105
- IPC: G11B11/105 ; B23K26/00 ; B23K26/40 ; H01L21/78 ; H01L21/268 ; H01L21/683 ; H01L21/304

Abstract:
According to an embodiment of inventive concepts, a substrate dicing method may include forming reformed patterns in a substrate using a laser beam, grinding a bottom surface of the substrate to thin the substrate, and expanding the substrate to divide the substrate into a plurality of semiconductor chips. The forming of the reformed patterns may include forming a first reformed pattern in the substrate and providing an edge focused beam to a region crossing the first reformed pattern to form a second reformed pattern in contact with the first reformed pattern.
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Information query
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