Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17041440Application Date: 2019-02-25
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Publication No.: US11322425B2Publication Date: 2022-05-03
- Inventor: Tatsuo Kumura
- Applicant: Dexerials Corporation
- Applicant Address: JP Tokyo
- Assignee: Dexerials Corporation
- Current Assignee: Dexerials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kenja IP Law PC
- Priority: JPJP2018-072770 20180404
- International Application: PCT/JP2019/007113 WO 20190225
- International Announcement: WO2019/193868 WO 20191010
- Main IPC: H01L23/433
- IPC: H01L23/433 ; H01L23/552

Abstract:
Provided is a semiconductor device having excellent heat radiation performance and electromagnetic wave suppression effect. A semiconductor device 1 comprises: a semiconductor element 30 formed on a substrate 50; a conductive shield can 20 having an opening hole 21; a conductive cooling member 40 located above the conductive shield can 20; a heat conductive sheet 10 formed between the semiconductor element 30 and the conductive cooling member 40 at least through the opening hole 21; and a conductive member 11 electrically connecting the conductive shield can 20 and the conductive cooling member 40.
Public/Granted literature
- US20210020542A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-01-21
Information query
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