Invention Grant
- Patent Title: Semiconductor storage device including a memory cell array and manufacturing method of the same
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Application No.: US17012317Application Date: 2020-09-04
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Publication No.: US11322441B2Publication Date: 2022-05-03
- Inventor: Satoshi Wakatsuki
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-046781 20200317
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/538 ; H01L21/768 ; H01L25/065

Abstract:
A semiconductor storage device according to an embodiment includes: an array chip having a memory cell array; a circuit chip having a circuit electrically connected to a memory cell; and a metal pad bonding the array chip and the circuit chip together. The metal pad includes an impurity. A concentration of the impurity is lowered as separating in a depth direction apart from a surface in a thickness direction of the metal pad.
Public/Granted literature
- US20210296253A1 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2021-09-23
Information query
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