Invention Grant
- Patent Title: Semiconductor package having channels formed between through-insulator-vias
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Application No.: US16697133Application Date: 2019-11-26
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Publication No.: US11322453B2Publication Date: 2022-05-03
- Inventor: Sen-Kuei Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/538 ; H01L23/31 ; H01L23/66 ; H01L23/00 ; H01L21/56 ; H01L21/48 ; H01L23/29 ; H01L23/498 ; H01L21/683

Abstract:
A semiconductor package includes a die, through insulator vias, an encapsulant, and a pair of metallization layers. The through insulator vias are disposed beside the die. The encapsulant wraps the die and the through insulator vias. The pair of metallization layers is disposed on opposite sides of the encapsulant. One end of each through insulator via contacts one of the metallization layers and the other end of each through insulator via contacts the other metallization layer. The through insulator vias form at least one photonic crystal structure. A pair of the through insulator vias is separated along a first direction by a channel filled by the encapsulant. A width of the channel along the first direction is larger than a pitch of the photonic crystal structure along the first direction.
Public/Granted literature
- US20210159185A1 SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-05-27
Information query
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