Invention Grant
- Patent Title: Semiconductor structure including a first substrate and a second substrate and a buffer structure in the second substrate
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Application No.: US16860041Application Date: 2020-04-27
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Publication No.: US11322458B2Publication Date: 2022-05-03
- Inventor: Shing-Yih Shih
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co., LLC
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/768 ; H01L23/48

Abstract:
A semiconductor structure includes a first substrate, a second substrate, a metal layer, a buffer structure, and a barrier structure. The first substrate has a landing pad. The second substrate is disposed over the first substrate. The metal layer is disposed in the second substrate and extends from the landing pad to a top surface of the second substrate. The buffer structure is disposed in the second substrate and surrounded by the metal layer, in which a top surface of the buffer structure is below a top surface of the metal layer. The barrier structure is disposed over the metal layer and the buffer structure.
Public/Granted literature
- US20210335725A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2021-10-28
Information query
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