Invention Grant
- Patent Title: Method of making memory cells, high voltage devices and logic devices on a substrate with silicide on conductive blocks
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Application No.: US17185709Application Date: 2021-02-25
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Publication No.: US11322507B2Publication Date: 2022-05-03
- Inventor: Chunming Wang , Jack Sun , Xian Liu , Leo Xing , Nhan Do , Andy Yang , Guo Xiang Song
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Priority: CN202010826250.6 20200817
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/11531 ; H01L27/11521 ; H01L29/788 ; H01L29/66 ; H01L21/28 ; H01L29/49
Abstract:
A method of forming a semiconductor device includes recessing the upper surface of first and second areas of a semiconductor substrate relative to the third area of the substrate, forming a pair of stack structures in the first area each having a control gate over a floating gate, forming a first source region in the substrate between the pair of stack structures, forming an erase gate over the first source region, forming a block of dummy material in the third area, forming select gates adjacent the stack structures, forming high voltage gates in the second area, forming a first blocking layer over at least a portion of one of the high voltage gates, forming silicide on a top surface of the high voltage gates which are not underneath the first blocking layer, and replacing the block of dummy material with a block of metal material.
Information query
IPC分类:
