Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16708849Application Date: 2019-12-10
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Publication No.: US11322511B2Publication Date: 2022-05-03
- Inventor: Sung Kwang Kwak , Sang Woo Park , Chang Woon Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2019-0058969 20190520
- Main IPC: H01L27/11575
- IPC: H01L27/11575 ; H01L27/11582 ; H01L23/528 ; H01L29/417 ; G11C16/08 ; G11C16/04
Abstract:
A semiconductor memory device includes a memory cell array disposed on a source plate; a discharge plate disposed on a bottom surface of the source plate; a source line discharge circuit disposed on a substrate below the discharge plate, and electrically coupling the discharge plate to a ground node in response to a source line discharge control signal; and a discharge path provided between the discharge plate and the source line discharge circuit.
Public/Granted literature
- US20200373321A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-11-26
Information query
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