Invention Grant
- Patent Title: Photoelectric conversion element and solid-state imaging device
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Application No.: US16763611Application Date: 2018-11-16
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Publication No.: US11322547B2Publication Date: 2022-05-03
- Inventor: Naoki Uchino , Yosuke Murakami , Miki Kimijima , Toshio Nishi
- Applicant: SONY CORPORATION , SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Tokyo; JP Kanagawa
- Assignee: SONY CORPORATION,SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY CORPORATION,SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Tokyo; JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JPJP2017-222977 20171120
- International Application: PCT/JP2018/042417 WO 20181116
- International Announcement: WO2019/098315 WO 20190523
- Main IPC: H01L27/30
- IPC: H01L27/30 ; H01L51/42

Abstract:
A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode. The organic photoelectric conversion layer has a domain of one organic semiconductor material therein. The domain of the one organic semiconductor material has a percolation structure in which the domain vertically extends in the organic photoelectric conversion layer in a film-thickness direction, and has a smaller domain length in a plane direction of the organic photoelectric conversion layer than a domain length in the film-thickness direction of the organic photoelectric conversion layer.
Information query
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