Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16682299Application Date: 2019-11-13
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Publication No.: US11322586B2Publication Date: 2022-05-03
- Inventor: Shunsuke Sakamoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2019-005029 20190116
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/06 ; H01L23/00 ; H01L29/423
Abstract:
A semiconductor device capable of suppressing the calorific value at the central portion of a wire bonding area is provided. A semiconductor device includes a plurality of IGBT cells in a cell area. An emitter electrode serves as a current path when a plurality of IGBT cells are in conductive state, and is formed to cover a plurality of IGBT cells. A wire is bonded to the emitter electrode. A dummy cell which does not perform a bipolar operation, is formed at least below a central portion of a wire bonding area which is an area at which the wire and the emitter electrode are bonded.
Public/Granted literature
- US20200227521A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-07-16
Information query
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