A power semiconductor device includes a control cell for controlling a load current. The control cell is electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including: a contact region having dopants of the first conductivity type or of a second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to induce a conduction channel in the channel region; and a contact plug including a doped semiconductive material and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which projects beyond lateral boundaries of the mesa.