Invention Grant
- Patent Title: Semiconductor device including junction material in a trench and manufacturing method
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Application No.: US16550146Application Date: 2019-08-23
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Publication No.: US11322596B2Publication Date: 2022-05-03
- Inventor: Jens Peter Konrath , Caspar Leendertz , Larissa Wehrhahn-Kilian
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Cooper Legal Group, LLC
- Priority: DE102018120734.4 20180824
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L29/16 ; H01L21/02 ; H01L29/739 ; H01L21/04 ; H01L29/47
Abstract:
An embodiment of a semiconductor device comprises a SiC semiconductor body, a gate dielectric and a gate electrode. A first trench extends from a first surface of the SiC semiconductor body into the SiC semiconductor body. A junction material is in the first trench, wherein the junction material and the SiC semiconductor body form a diode.
Public/Granted literature
- US20200066857A1 SEMICONDUCTOR DEVICE INCLUDING JUNCTION MATERIAL IN A TRENCH AND MANUFACTURING METHOD Public/Granted day:2020-02-27
Information query
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