An object is to provide a technique capable of improving both recovery loss and recovery capability. The semiconductor device includes a base layer of a second conductive type disposed on a front surface side of the semiconductor substrate in the IGBT region and an anode layer of a second conductive type disposed on a front surface side of the semiconductor substrate in the diode region. The anode layer includes a first portion having a lower end located at a same position as a lower end of the base layer or having a lower end located above the lower end of the base layer and a second portion adjacent to the first portion in plan view, and whose lower end is located above the lower end of the first portion.