Invention Grant
- Patent Title: Semiconductor device structure and method for forming the same
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Application No.: US16905450Application Date: 2020-06-18
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Publication No.: US11322619B2Publication Date: 2022-05-03
- Inventor: Yu-Chao Lin , Wei-Sheng Yun , Tung-Ying Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/66
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure and a second fin structure formed over a substrate. The semiconductor device structure includes a first gate structure formed over the first fin structure, and the first gate structure includes a first portion of a gate dielectric layer and a first portion of a filling layer. The semiconductor device structure also includes a second gate structure formed over the second fin structure, and a first isolation sealing layer between the first gate structure and the second gate structure. The first isolation sealing layer is in direct contact with the first portion of the gate dielectric layer and the first portion of the filling layer.
Public/Granted literature
- US20210135009A1 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2021-05-06
Information query
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