Invention Grant
- Patent Title: Oxide-based flexible high voltage thin film transistor
-
Application No.: US16981464Application Date: 2019-03-19
-
Publication No.: US11322622B2Publication Date: 2022-05-03
- Inventor: Yicheng Lu , Wen-Chiang Hong , Xiaolong Du , Yonghui Zhang , Zengxia Mei
- Applicant: Rutgers, The State University of New Jersey
- Applicant Address: US NJ New Brunswick
- Assignee: Rutgers, The State University of New Jersey
- Current Assignee: Rutgers, The State University of New Jersey
- Current Assignee Address: US NJ New Brunswick
- Agency: Hamilton, Brook, Smith & Reynolds, P.C.
- International Application: PCT/US2019/022872 WO 20190319
- International Announcement: WO2019/183030 WO 20190926
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/72 ; H01L29/51 ; H01L29/739 ; H01L27/06 ; H01L29/417 ; H01L29/22 ; H02M3/155
Abstract:
Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 μA, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.
Public/Granted literature
- US20210005753A1 Oxide-Based Flexible High Voltage Thin Film Transistor Public/Granted day:2021-01-07
Information query
IPC分类:
