Invention Grant
- Patent Title: Photodiode
-
Application No.: US16799183Application Date: 2020-02-24
-
Publication No.: US11322636B2Publication Date: 2022-05-03
- Inventor: Asif J. Chowdhury , Ajey Poovannummoottil Jacob , Yusheng Bian , Michal Rakowski
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Roberts Calderon Safran & Cole, P.C.
- Agent David Cain; Andrew M. Calderon
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/0232 ; H01L31/02
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.
Public/Granted literature
- US20210265519A1 PHOTODIODE Public/Granted day:2021-08-26
Information query
IPC分类:
