Invention Grant
- Patent Title: Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
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Application No.: US16634282Application Date: 2018-07-12
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Publication No.: US11322650B2Publication Date: 2022-05-03
- Inventor: Lekhnath Bhusal , Theodore Chung , Parijat Deb
- Applicant: Lumileds LLC
- Applicant Address: US CA San Jose
- Assignee: Lumileds LLC
- Current Assignee: Lumileds LLC
- Current Assignee Address: US CA San Jose
- Agency: Servilla Whitney LLC
- Priority: EP18152290 20180118
- International Application: PCT/US2018/041771 WO 20180712
- International Announcement: WO2019/022960 WO 20190131
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/30 ; H01L33/36 ; H01L33/14
Abstract:
A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.
Public/Granted literature
- US20210066545A1 STRAINED ALGAINP LAYERS FOR EFFICIENT ELECTRON AND HOLE BLOCKING IN LIGHT EMITTING DEVICES Public/Granted day:2021-03-04
Information query
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