Invention Grant
- Patent Title: Light-emitting element and method for manufacturing same
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Application No.: US16584320Application Date: 2019-09-26
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Publication No.: US11322651B2Publication Date: 2022-05-03
- Inventor: Eiji Muramoto , Akinori Kishi
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JPJP2018-182626 20180927
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/32 ; H01L33/38 ; H01L33/00 ; H01L33/22 ; H01L33/44 ; H01L33/06

Abstract:
A light-emitting element includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a first electrode, and a second electrode. The first semiconductor layer includes gallium and nitrogen and is of an n-type. The second semiconductor layer includes gallium and nitrogen and is of a p-type. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The first semiconductor layer includes a first partial region and a first side surface region. The first partial region includes a first surface contacting the first electrode. The first side surface region includes a first side surface crossing a plane perpendicular to a first direction. The first direction is from the second semiconductor layer toward the first semiconductor layer.
Information query
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