A spin-sensitive ultraviolet light-based device includes a p-type GaN layer; an n-type Gd doped ZnO nanostructure grown on the GaN layer; a first electrode formed on the GaN layer; and a second electrode formed on the Gd doped ZnO nanostructure. Electrons supplied through the first and second electrodes are spin-polarized by the Gd doped ZnO nanostructure. Polarized ultraviolet light emitted or received by the Gd doped ZnO nanostructure is correlated with the spin-polarized electrons.