- Patent Title: Photoelectric conversion element and solid-state imaging apparatus
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Application No.: US16762702Application Date: 2018-10-30
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Publication No.: US11322703B2Publication Date: 2022-05-03
- Inventor: Shingo Takahashi
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JPJP2017-221739 20171117
- International Application: PCT/JP2018/040215 WO 20181030
- International Announcement: WO2019/098003 WO 20190523
- Main IPC: H01L51/42
- IPC: H01L51/42 ; H01L27/28 ; H01L51/44 ; H01L27/30 ; H01L27/146

Abstract:
A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and formed using a plurality of materials having average particle diameters different from each other, the plurality of materials including at least fullerene or a derivative thereof.
Public/Granted literature
- US20210175452A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING APPARATUS Public/Granted day:2021-06-10
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