Invention Grant
- Patent Title: OLED device structure with reduced voltage drop and manufacturing method thereof
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Application No.: US16626744Application Date: 2019-12-23
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Publication No.: US11322712B2Publication Date: 2022-05-03
- Inventor: Longqiang Shi
- Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicant Address: CN Guangdong
- Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee Address: CN Guangdong
- Agency: Benesch, Friedlander, Coplan & Aronoff LLP
- Priority: CN201911236769.2 20191205
- International Application: PCT/CN2019/127378 WO 20191223
- International Announcement: WO2021/109279 WO 20210610
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L51/56

Abstract:
An organic light-emitting diode (OLED) structure and a manufacturing method thereof are provided. The OLED structure includes a substrate, a metal layer, a passivation layer, an anode, and an OLED functional layer. By setting the OLED functional layer to form a PN junction with low impedance. The PN junction and a conductive layer with high impedance constitute a resistive divider, and the PN junction is turned on by adjusting a high-voltage direct current (DC) input source and a low-voltage DC input source. Because the resistance of the PN junction is very small, the potential of the cathode can be approximated to the potential of the low-voltage DC input source according to resistive voltage divider rule, and the low-voltage DC input source uses low-resistance metal, which can effectively avoid the problem of IR drop.
Public/Granted literature
- US20210336191A1 OLED DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-10-28
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